2014年12月
Self-accelerating oxidation on Si(111)7 x 7 surfaces studied by real-time photoelectron spectroscopy
SURFACE AND INTERFACE ANALYSIS
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- 巻
- 46
- 号
- 12-13
- 開始ページ
- 1147
- 終了ページ
- 1150
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1002/sia.5615
- 出版者・発行元
- WILEY-BLACKWELL
Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 degrees C has been investigated by real-time X-ray photoelectron spectroscopy. Self-accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 degrees C. During self-acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Si, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-accelerating interface oxidation model of Si(111)7x7 surfaces that includes the point defect (emitted Si atoms+vacancies) generation is proposed. Copyright (c) 2014 John Wiley & Sons, Ltd.
- リンク情報
- ID情報
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- DOI : 10.1002/sia.5615
- ISSN : 0142-2421
- eISSN : 1096-9918
- Web of Science ID : WOS:000345574200008