Papers

Peer-reviewed
Dec, 2004

Density-dependent electronic structure of zinc-blende-type MnAs dots on GaAs(001) studied by in situ photoemission spectroscopy

PHYSICAL REVIEW B
  • J Okabayashi
  • ,
  • M Mizuguchi
  • ,
  • K Ono
  • ,
  • M Oshima
  • ,
  • A Fujimori
  • ,
  • H Kuramochi
  • ,
  • H Akinaga

Volume
70
Number
23
First page
233305ー1
Last page
233305ー4
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1103/PhysRevB.70.233305
Publisher
AMER PHYSICAL SOC

We report on the density dependence of the morphology and electronic structure of zinc-blende-type MnAs dots using in situ photoemission spectroscopy combined with molecular-beam epitaxy. Transmission electron microscopy images showed the zinc-blende-type crystalline structure of 10-nm diameter for each dot on sulfur-passivated GaAs(001) surface. The valence-band photoemission spectra of the MnAs dots were similar to those of the diluted magnetic semiconductor Ga1-xMnxAs. With increasing dot density, the characteristic spectra of the zinc-blende-type MnAs persist but a weak Fermi edge appears, suggesting a metallic behavior as a result of percolation between the dots or the appearance of hexagonal MnAs as a minority phase.

Link information
DOI
https://doi.org/10.1103/PhysRevB.70.233305
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000226112100016&DestApp=WOS_CPL
ID information
  • DOI : 10.1103/PhysRevB.70.233305
  • ISSN : 1098-0121
  • eISSN : 1550-235X
  • Web of Science ID : WOS:000226112100016

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