2000年5月
Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets
APPLIED PHYSICS LETTERS
- ,
- ,
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- 巻
- 76
- 号
- 18
- 開始ページ
- 2600
- 終了ページ
- 2602
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.126421
- 出版者・発行元
- AMER INST PHYSICS
We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix. (C) 2000 American Institute of Physics. [S0003-6951(00)02718-2].
- リンク情報
- ID情報
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- DOI : 10.1063/1.126421
- ISSN : 0003-6951
- Web of Science ID : WOS:000086662900039