2014年3月
Control of work function of graphene by plasma assisted nitrogen doping
APPLIED PHYSICS LETTERS
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- 巻
- 104
- 号
- 13
- 開始ページ
- 131602
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4870424
- 出版者・発行元
- AMER INST PHYSICS
Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes doping of nitrogen atom into the graphene layer. Nitrogen atoms are initially doped at a graphitic site (inside the graphene) for the defect-free HOPG, while doping to a pyridinic or a pyrrolic site (edge of the graphene) is dominant for the defective HOPG. The work function of graphene correlates strongly with the site and amount of doped nitrogen. Nitrogen atoms doped at a graphitic site lower the work function, while nitrogen atoms at a pyridinic or a pyrrolic site increase the work function. Control of plasma treatment time and the amount of initial defect could change the work function of graphite from 4.3 eV to 5.4 eV, which would open a way to tailor the nature of graphene for various industrial applications. (C) 2014 AIP Publishing LLC.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4870424
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000334408500014