A buried layer of crystalline SiC in silicon wafer is synthesized by 1.5 MeV C+ implantation at a dose of 1.5 x 10(18) ions/cm2 at a high temperature of 880-degrees-C. The infrared absorption spectrum and the X-ray diffraction pattern of this sample show formation of 3C-type SiC crystal. The pole figures of X-ray diffraction show that crystallographic orientation of the SiC buried layer is aligned along the lattice of the Si substrate, that is, topotaxial internal growth of crystalline SiC occurs in a single crystal of Si during the high-temperature ion implantation.