2002年
Structural and spectroscopic study of manganese silicide islands on silicon
NANOPARTICULATE MATERIALS
- ,
- ,
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- 巻
- 704
- 号
- 開始ページ
- 245
- 終了ページ
- 250
- 記述言語
- 英語
- 掲載種別
- 記事・総説・解説・論説等(国際会議プロシーディングズ)
- 出版者・発行元
- MATERIALS RESEARCH SOCIETY
The Mn deposited clean Si (I 11) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.
- リンク情報
- ID情報
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- ISSN : 0272-9172
- Web of Science ID : WOS:000177647200037