2010年6月
Enhanced performance of bottom-contact organic field-effect transistors with M(DMDCNQI)(2) buffer layers
PHYSICA B-CONDENSED MATTER
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- 巻
- 405
- 号
- 11
- 開始ページ
- S378
- 終了ページ
- S380
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.physb.2009.11.010
- 出版者・発行元
- ELSEVIER SCIENCE BV
Source and drain electrodes made of Cu or Ag in organic field-effect transistors are treated with an organic acceptor dimethyldicyanoquinonediimine (DMDCNQI) The performance of the resulting bottom-contact pentacene transistor is improved by two orders and is comparable to the Au top-contact devices (C) 2009 Elsevier B V All rights reserved
- リンク情報
- ID情報
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- DOI : 10.1016/j.physb.2009.11.010
- ISSN : 0921-4526
- eISSN : 1873-2135
- Web of Science ID : WOS:000283808400109