2013年9月
Enhanced thermoelectric figure of merit in p-type Ag-doped ZnSb nanostructured with Ag3Sb
SCRIPTA MATERIALIA
- ,
- ,
- 巻
- 69
- 号
- 5
- 開始ページ
- 397
- 終了ページ
- 400
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.scriptamat.2013.05.029
- 出版者・発行元
- PERGAMON-ELSEVIER SCIENCE LTD
Zn-Sb systems are interesting as thermoelectric materials because the elements are relatively cheap and show low toxicity. In this work, a high thermoelectric figure of merit of 1.15 at 670 K is obtained in a p-type Ag-doped ZnSb nanostructured with in situ formed Ag3Sb because of its optimized carrier concentration and a significant reduction in lattice thermal conductivity. The samples also exhibit good thermal stability. The results here suggest that ZnSb is an efficient, stable and low-cost thermoelectric material and deserves more attention. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.scriptamat.2013.05.029
- ISSN : 1359-6462
- Web of Science ID : WOS:000322416500014