2008年8月
Air-assisted high-performance field-effect transistor with thin films of picene
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
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- 巻
- 130
- 号
- 32
- 開始ページ
- 10470
- 終了ページ
- +
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/ja803291a
- 出版者・発行元
- AMER CHEMICAL SOC
A field-effect transistor (FET) with thin films of picene has been fabricated on SiO(2) gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm(2) V(-1) s(-1) and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The p increased with an increase in temperature, and the FET performance was improved by exposure to air or O(2) for a long time. This result implies that this device is an air (O(2))-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.
- リンク情報
- ID情報
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- DOI : 10.1021/ja803291a
- ISSN : 0002-7863
- Web of Science ID : WOS:000258293800011