The magnetic properties and the electronic states were investigated for a magnetic semiconductor (Zn,Cr)Te co-doped nitrogen (N) as an acceptor impurity. A series of N-doped Zn1xCrxTe thin films with Cr compositions in the range of x = 0.060.09 and N concentrations in the range of [N] = 10(18-)10(20) cm(3) were grown by molecular beam epitaxy (MBE), and the magnetization measurement using superconducting quantum interference device (SQUID) magnetometer and the X-ray absorption fine structure (XAFS) measurements were performed. As a result, the disappearance of ferromagnetic behaviors and the change in X-ray absorption near edge structure (XANES) spectra were observed at almost the same nitrogen concentration around [N] = 1 x 10(20) cm3. This correlated change in the magnetic properteis and the Cr electronic states was discussed in relation to a decrease of the electron density in the 3d impurity level due to the N co-doping. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)