Thin TaS2 has been prepared by the van der Waals growth technique coupled with the chemical vapor transport technique using the I-2 agent. Hexagonal boron nitride (h-BN) and mica, which have layered crystal structures, were used as substrate materials. Thin TaS2 was grown on layered substrates sealed in a quartz ampoule. A high-resolution X-ray diffractometer with a four-crystal monochrometer revealed that very thin 2H-TaS2 film was grown on the surface of the Ag/BN substrate at 300degreesC, where Ag was evaporated on the h-BN substrate surface prior to the film growth. As for the mica substrate, very thin 2H-TaS2 was grown on the substrates with and without Ag modification.