2002年
SiO2薄膜付きウエハ上微粒子からの散乱光検出
精密工学会誌
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- 巻
- 68
- 号
- 4
- 開始ページ
- 531
- 終了ページ
- 535
- 記述言語
- 日本語
- 掲載種別
- DOI
- 10.2493/jjspe.68.531
- 出版者・発行元
- 公益社団法人精密工学会
More than 80% of the pattern defects in a semiconductor manufacturing process are caused by the adhesion of particles on a wafer. In a production line, the particles larger than 0.2 μm in diameter on the wafer on which a Si0_2 thin film had been deposited, have to be detected. In this study, the intensity of light scattered by particles 0.2 μm in diameter on the wafer on which a Si0_2 thin film had been deposited, without being influenced by the thickness variation of the thin films, is detected using an experimental apparatus. The following results were obtained. (1) P-polarized laser light with the incident angle of 75° is suitable for the illumination. (2) A method of detecting the light scattered perpendicularly upward from the wafer is suitable. (3) The variation of the detected light intensity is 57% when the light scattered by a particle 0.2 μm in diameter on a wafer on which a 0-300-nm-thick Si0_2 thin film had been deposited, is detected. P-polarized laser light is suitable because the variation of the detected light intensity when a particle is illuminated by S-polarized laser light is 96%. The above-mentioned experimental results coincide fairly well with the results obtained by simulation.
- リンク情報
- ID情報
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- DOI : 10.2493/jjspe.68.531
- ISSN : 0912-0289
- ISSN : 1882-675X
- CiNii Articles ID : 110001373392
- CiNii Books ID : AN1003250X