2004年6月
The de Haas-van Alphen effect and the Fermi surface in CePt3Si and LaPt3Si
JOURNAL OF PHYSICS-CONDENSED MATTER
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- 巻
- 16
- 号
- 23
- 開始ページ
- L287
- 終了ページ
- L296
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/0953-8984/16/23/L02
- 出版者・発行元
- IOP PUBLISHING LTD
We have carried out a de Hass-van Alphen (dHvA) experiment for the recently discovered CePt3Si, which is the first heavy fermion superconductor without inversion symmetry in the tetragonal crystal structure, together with a dHvA experiment for a non-4f reference compound LaPt3Si. As for LaPt3Si, several dHvA branches were observed. Among them, the two main dHvA branches with the dHvA frequency (the cyclotron effective mass) of 1.10 x 10(8) Oe (1.4 m(0)) and 8.41 x 10(7) Oe (1.5 m(0)) were found to be well explained from the FLAPW energy band calculations, corresponding to bands 64- and 63-multiply-connected hole Fermi surfaces, respectively. On the other hand, the dHvA frequencies of 10(7) Oe in CePt3Si are small in magnitude, although the corresponding cyclotron masses of 10-20 m(0) are extremely large.
- リンク情報
- ID情報
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- DOI : 10.1088/0953-8984/16/23/L02
- ISSN : 0953-8984
- Web of Science ID : WOS:000222483000002