論文

査読有り
2004年6月

The de Haas-van Alphen effect and the Fermi surface in CePt3Si and LaPt3Si

JOURNAL OF PHYSICS-CONDENSED MATTER
  • S Hashimoto
  • ,
  • T Yasuda
  • ,
  • T Kubo
  • ,
  • H Shishido
  • ,
  • T Ueda
  • ,
  • R Settai
  • ,
  • TD Matsuda
  • ,
  • Y Haga
  • ,
  • H Harima
  • ,
  • Y Onuki

16
23
開始ページ
L287
終了ページ
L296
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/0953-8984/16/23/L02
出版者・発行元
IOP PUBLISHING LTD

We have carried out a de Hass-van Alphen (dHvA) experiment for the recently discovered CePt3Si, which is the first heavy fermion superconductor without inversion symmetry in the tetragonal crystal structure, together with a dHvA experiment for a non-4f reference compound LaPt3Si. As for LaPt3Si, several dHvA branches were observed. Among them, the two main dHvA branches with the dHvA frequency (the cyclotron effective mass) of 1.10 x 10(8) Oe (1.4 m(0)) and 8.41 x 10(7) Oe (1.5 m(0)) were found to be well explained from the FLAPW energy band calculations, corresponding to bands 64- and 63-multiply-connected hole Fermi surfaces, respectively. On the other hand, the dHvA frequencies of 10(7) Oe in CePt3Si are small in magnitude, although the corresponding cyclotron masses of 10-20 m(0) are extremely large.

リンク情報
DOI
https://doi.org/10.1088/0953-8984/16/23/L02
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000222483000002&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/0953-8984/16/23/L02
  • ISSN : 0953-8984
  • Web of Science ID : WOS:000222483000002

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