1992年
High-Gain and Very Sensitive Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode
IEEE Transactions on Electron Devices
- ,
- ,
- 巻
- 39
- 号
- 2
- 開始ページ
- 305
- 終了ページ
- 312
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/16.121687
A photonic switching device with very large gain and high sensitivity has been developed by the vertical and direct integration of a heterojunction phototransistor and a laser diode. The device switches on with very low input power of ~10 nW and emits output power of ~ 4 mW under continuous-wave condition at room temperature. The minimum energy for switching on is estimated to be as low as 80 fJ. The internal optical feedback of the device is quantitatively discussed to interpret the low-power operation for the switch-on. © 1992 IEEE
- リンク情報
- ID情報
-
- DOI : 10.1109/16.121687
- ISSN : 1557-9646
- ISSN : 0018-9383
- SCOPUS ID : 0026819952