論文

査読有り
1992年

High-Gain and Very Sensitive Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode

IEEE Transactions on Electron Devices
  • Susumu Noda
  • ,
  • Kimitaka Shibata
  • ,
  • Akio Sasaki

39
2
開始ページ
305
終了ページ
312
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/16.121687

A photonic switching device with very large gain and high sensitivity has been developed by the vertical and direct integration of a heterojunction phototransistor and a laser diode. The device switches on with very low input power of ~10 nW and emits output power of ~ 4 mW under continuous-wave condition at room temperature. The minimum energy for switching on is estimated to be as low as 80 fJ. The internal optical feedback of the device is quantitatively discussed to interpret the low-power operation for the switch-on. © 1992 IEEE

リンク情報
DOI
https://doi.org/10.1109/16.121687
ID情報
  • DOI : 10.1109/16.121687
  • ISSN : 1557-9646
  • ISSN : 0018-9383
  • SCOPUS ID : 0026819952

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