2013年2月7日
Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells
Journal of Applied Physics
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- 巻
- 113
- 号
- 5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4789374
GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1-xSb/AlyGa 1-ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of ∼45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed. © 2013 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4789374
- ISSN : 0021-8979
- SCOPUS ID : 84873677154