論文

査読有り
2017年8月1日

Manifestation of hopping conductivity and granularity within phase diagrams of Lao1-x Fx BiS2, Sr1-x Lax FBiS2 and related BiS2-based compounds

Journal of Physics Condensed Matter
  • R. Arouca
  • ,
  • M. B. Silva Neto
  • ,
  • C. M. Chaves
  • ,
  • M. Nagao
  • ,
  • S. Watauchi
  • ,
  • I. Tanaka
  • ,
  • M. Elmassalami

29
35
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/1361-648X/aa7c37
出版者・発行元
Institute of Physics Publishing

Layered BiS2-based series, such as LaO1-xFxBiS2 and Sr1-xLaxFBiS2, offer ideal examples for studying normal and superconducting phase diagram of a solid solution that evolves from a nonmagnetic band-insulator parent. We constructed typical x - T phase diagrams of these systems based on events occurring in thermal evolution of their electrical resistivity, ρ(x, T). Overall evolution of these diagrams can be rationalized in terms of (i) Mott-Efros-Shklovskii scenario which, within the semiconducting x &lt
xMIT regime (xMIT = Mott metal-insulator transition), describes the doping influence on the thermally activated hopping conductivity. (ii) A granular metal (superconductor) scenario which, within xMIT &lt
x &lt
xsolubility, describes the evolution of normal and superconducting properties in terms of conductance g, Coulomb charging energy Ec and Josephson coupling J
their joint influence is usually captured within a g - gEc/J - T phase diagram. Based on analysis of the granular character of ρ(x, T), we converted the x - T diagrams into projected g - T diagrams which, being fundamental, allow a better understanding of evolution of various granular-related properties (in particular the hallmarks of normal-state ∂ρ/∂T &lt
0 feature and superconductor-insulator transition) and how such properties are influenced by x, pressure or heat treatment.

リンク情報
DOI
https://doi.org/10.1088/1361-648X/aa7c37
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000425256500001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/1361-648X/aa7c37
  • ISSN : 1361-648X
  • ISSN : 0953-8984
  • SCOPUS ID : 85027337767
  • Web of Science ID : WOS:000425256500001

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