We report a voltage-induced perpendicular magnetic anisotropy (PMA) change in sputter-deposited Ta vertical bar CoFeB vertical bar MgO and Ru vertical bar CoFeB vertical bar MgO junctions. The PMA change is quantitatively evaluated by the field dependence of the tunneling magnetoresistance for various bias voltages. We find that both the sign and amplitude of the voltage effect depend on the underlayer, Ta or Ru, below the CoFeB layer. The rf voltage-induced ferromagnetic resonance spectra also support the underlayer-material-dependent direction of the voltage torque. The present study shows that the underlayer is one of the key parameters for controlling the voltage effect. (C) 2013 AIP Publishing LLC.