1997年12月
単結晶シリコンインゴットの高能率貫通穴放電加工に関する研究(共著)
精密工学会誌
- ,
- ,
- 巻
- 63
- 号
- 12
- 開始ページ
- 1725
- 終了ページ
- 1729
- 記述言語
- 日本語
- 掲載種別
- DOI
- 10.2493/jjspe.63.1725
- 出版者・発行元
- 公益社団法人精密工学会
In the manufacturing process of integrated circuit, graphite plate with many fine holes has been used as an electrode in plasma etching process. Recently, it is examined to use a single crystalline silicon as the electrode in order to minimize the contamination. However, it is difficult to machine accurately by the conventional methods, since the material removal is due to brittle fracture. The machining force in EDM is very small compared with that in conventional machining, therefore the possibility of high efficiency and high accuracy boring hole in a silicon ingot by EDM is experimentally investigated in this study. The removal rate of silicon is from 4 to 8 times higher than that of steel, while the electrode wear is from one-fifteenth to one-seventh times smaller. When the electrode advances at the exit of hole, stagnation region appears in which the electrode retracts suddenly and the machining becomes unstable. In order to prevent this phenomenon, the copper plate is closely attached under silicon ingot firmly. In this method, better hole can be obtained without chipping. Besides, there is no sticking of insulator which contains silicon oxide and copper oxide on the wall of hole in this case. Furthermore, it is proved that even high aspect ratio over 200 boring is possible.
- リンク情報
- ID情報
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- DOI : 10.2493/jjspe.63.1725
- ISSN : 0912-0289
- J-Global ID : 200902111117624356
- CiNii Articles ID : 110001372181
- CiNii Books ID : AN1003250X