High growth rate deposition of highly oriented indium nitride (InN) pillar crystals were successfully grown on Si(100) substrate prepared under atmospheric pressure using a halide CVD method (AP-HCVD). The growth rate of InN pillar crystal can be enhanced threefold by AP-HCVD system with metal halide dual sources zone, and the maximum growth rate of 8.33 nm/s was achieved. X-ray diffraction and X-ray pole-figure analyses showed that the each InN pillar crystal grows with a different rotation angle around the 〈001〉 axis. Selected area transmission electron diffraction showed that that they are of high crystal quality. © 2005 Elsevier Ltd. All rights reserved.