We report the fabrication of thin film transistors (TFTs) from networks of nonbundled single-walled carbon nanotubes with controlled surface densities. Individual nanotubes were synthesized by using a spark generator-based floating catalyst CVD process. High uniformity and the control of SWCNT surface density were realized by mixing of the SWCNT aerosol in a turbulent flow mixer and monitoring the online number concentration with a condensation particle counter at the reactor outlet in real time. The networks consist of predominantly nonbundled SWCNTs with diameters of 1.0-1.3 nm, mean length of 3.97 mu m, and metallic to semiconducting tube ratio of 1:2. The ON/OFF ratio and charge carrier mobility of SWCNT TFTs were simultaneously optimized through fabrication of devices with SWCNT surface densities ranging from 0.36 to 1.8 mu m(-2) and channel lengths and widths from 5 to 100 mu m and from 100 to 500 mu m, respectively. The density optimized TFTs exhibited excellent performance figures with charge carrier mobilities up to 100 cm(2) V-1 s(-1) and ON/OFF current ratios exceeding 1 x 10(6), combined with high uniformity and more than 99% of devices working as theoretically expected.