We succeeded in growing 4 single crystal Of Ce2Pd3Si5 with the orthorhombic crystal structure by the Sn-flux method and measured the electrical resistivity, specific heat, magnetic susceptibility and magnetization. The antiferromagnetic ordering was confirmed to occure below T-N = 7.2 K. The electronic specific heat coefficient was determined as 77 mJ/(K(2.)mol-Ce). The antiferromagnetic easy-axis was found to be the [001] direction, with an ordered moment of mu(s) = 1.3 mu(B)/Ce, while [100] and [010] directions are hard-axes in magnetization. We observed a metamagnetic transition at H-c = 5.7T for H parallel to [00 1] and a saturation of magnetization above H-s = 12.1 T. The characteristic magnetic phase diagram was constructed. The crystalline electric field (CEF) scheme was also proposed for Ce2Pd3Si5, where the splitting energies between the ground state and two excited doublets in the CEF scheme are estimated to be 87 and 504K, respectively.