1998年
Six-fold coordinated silicon at grain boundaries in sintered α-Al<inf>2</inf>O<inf>3</inf>
Applied Physics Letters
- ,
- ,
- 巻
- 72
- 号
- 2
- 開始ページ
- 191
- 終了ページ
- 193
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.120681
High-resolution transmission electron microscopy (HRTEM) and analytical electron microscopy (AEM) have been carried out on Si-doped sintered α-Al2O3. HRTEM shows that there is no amorphous phase at grain boundaries. The Si-segregated boundary is found to be much more sensitive to irradiation damage than undoped Al2O3 grain boundaries. AEM with energy dispersive x-ray spectroscopy (EDS) shows the significant segregation of Si at grain boundaries, and AEM with electron energy-loss spectroscopy (EELS) reveals the existence of six-fold coordinated Si at the grain boundaries. The theoretical calculations obtained by the molecular orbital method support the data obtained by EELS. © 1998 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.120681
- ISSN : 0003-6951
- ORCIDのPut Code : 84844245
- SCOPUS ID : 0012569844