Bottom-up fill of Cu in deep submicrometer via holes was achieved through electroless plating alone for the first time. We investigated the effect of addition of inhibitor molecules to electroless Cu plating solution, and found that sulfopropyl sulfonate (SPS) was highly effective in promoting the bottom-up fill. The tendency for bottom-up filling was enhanced by shrinkage of the hole diameter. This suggests that the diffusion flux of SPS molecules to the bottom of holes was more suppressed for smaller holes. Thus, the Cu deposition rate near the hole bottom is larger than that outside the hole, leading to bottom-up filling. (C) 2004 The Electrochemical Society.