MISC

2005年

Scanning Tunneling Microscopy observation of individual boron dopant atoms beneath Si(001)-2 x 1 surfaces

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
  • M Nishizawa
  • ,
  • L Bolotov
  • ,
  • T Kanayama

44
46-49
開始ページ
L1436
終了ページ
L1438
記述言語
英語
掲載種別
DOI
10.1143/JJAP.44.L1436
出版者・発行元
INST PURE APPLIED PHYSICS

Individual B dopant atoms residing beneath Si(001)-2 x 1 surfaces have been detected by scanning tunneling microscopy (STM). A subsurface B atom appears as a broad protrusion in filled-state images, while it appears as either a broad depression or a localized protrusion in empty-state images depending on the STM tip condition. This variation in dopant appearance is attributed to the different work function (WF) of the tip, i.e., the amount of tip-induced band bending differs depending on the tip WF, resulting in a different tunneling path and an opposite dopant appearance under the same bias voltage.

Web of Science ® 被引用回数 : 13

リンク情報
DOI
https://doi.org/10.1143/JJAP.44.L1436
CiNii Articles
http://ci.nii.ac.jp/naid/10016873301
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000234091600014&DestApp=WOS_CPL