2005年

# Scanning Tunneling Microscopy observation of individual boron dopant atoms beneath Si(001)-2 x 1 surfaces

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
• M Nishizawa
• ,
• L Bolotov
• ,
• T Kanayama

44
46-49

L1436

L1438

DOI
10.1143/JJAP.44.L1436

INST PURE APPLIED PHYSICS

Individual B dopant atoms residing beneath Si(001)-2 x 1 surfaces have been detected by scanning tunneling microscopy (STM). A subsurface B atom appears as a broad protrusion in filled-state images, while it appears as either a broad depression or a localized protrusion in empty-state images depending on the STM tip condition. This variation in dopant appearance is attributed to the different work function (WF) of the tip, i.e., the amount of tip-induced band bending differs depending on the tip WF, resulting in a different tunneling path and an opposite dopant appearance under the same bias voltage.

Web of Science ® 被引用回数 : 13

リンク情報
DOI
https://doi.org/10.1143/JJAP.44.L1436
CiNii Articles
http://ci.nii.ac.jp/naid/10016873301
Web of Science