2014年7月
Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling
JOURNAL OF APPLIED PHYSICS
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- 巻
- 116
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4884876
- 出版者・発行元
- AMER INST PHYSICS
Scanning tunneling microscopy for semiconductor carrier profiling is simulated in three dimensions. By solving the tunnel currents between a probe tip and a sample consistently with the current continuity equations, current-voltage characteristics in good agreement with measurements are obtained. Critical differences from potential-based calculations are observed under depletion and inversion conditions. By preparing a current-concentration table from samples with uniform concentrations, the carrier profile in p-n junction samples can be extracted by estimating the concentrations at each position. It is revealed that the tunnel current is spread around the depletion region of a p-n junction, which affects the results dramatically. When a proposed simulation is iteratively used with measurements, impurity profile extraction is possible even in the depletion region. (C) 2014 AIP Publishing LLC.
- リンク情報
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- DOI
- https://doi.org/10.1063/1.4884876
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000340267600030&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?eid=2-s2.0-84904313315&partnerID=MN8TOARS
- URL
- http://orcid.org/0000-0002-8326-3708
- ID情報
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- DOI : 10.1063/1.4884876
- ISSN : 0021-8979
- eISSN : 1089-7550
- ORCIDのPut Code : 20800865
- SCOPUS ID : 84904313315
- Web of Science ID : WOS:000340267600030