2011年
3D modeling based on current continuity for STM carrier profiling of semiconductor devices
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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- 開始ページ
- 259
- 終了ページ
- 262
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1109/SISPAD.2011.6035074
Current continuity based 3D modeling of STM carrier profiling of semiconductor devices is achieved for the first time. Tunnel currents between probe tip and devices are solved consistently with current continuity consideration. It is revealed that tunnel current is reduced in current continuity model under depletion conditions. Spatial resolution achieved in the model is discussed in comparison to potential based modeling. Influence of discrete dopants is also discussed in concern with Coulomb potential fluctuations in nanoscale systems, which is a key issue of nano devices. © 2011 IEEE.
- リンク情報
- ID情報
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- DOI : 10.1109/SISPAD.2011.6035074
- ORCIDのPut Code : 20800870
- SCOPUS ID : 80054971892