論文

査読有り 筆頭著者 責任著者
2008年

PLASMON-ENHANCED ABSORPTION AND PHOTOCURRENT IN ULTRATHIN GaAs SOLAR CELLS WITH METALLIC NANOSTRUCTURES

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4
  • Katsuaki Tanabe
  • ,
  • Keisuke Nakayama
  • ,
  • Harry A. Atwater

開始ページ
491
終了ページ
494
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/PVSC.2008.4922457
出版者・発行元
IEEE

Metallic nanostructures can excite surface plasmons and can dramatically increase the optical path length in thin active photovoltaic layers to enhance overall photoabsorption. This effect has potential for cost and weight reduction with thinned layers and also for efficiency enhancement associated with increased carrier excitation level in the absorber layer.
We have observed short-circuit current and efficiency enhancements under AM1.5G solar spectrum for GaAs cells with dense arrays of Ag nanoparticles deposited through porous alumina membrane masks, relative to reference GaAs cells with no metal nanoparticle array. This photocurrent enhancement is attributed to the scattering effects of metal nanoparticles for light incident into photovoltaic layers. A simple optical model representing metal nanoparticle surface plasmon resonances and multi-angle scattering has been developed and well explains the spectral behavior of the experimental photocurrent enhancement.
A novel ultrathin GaAs cell structure with a metallic back layer has been also developed with a bonding and layer transfer technique. This waveguide-like GaAs cell showed significant enhancements in short-circuit current density and efficiency relative to reference GaAs cells with an absorbing GaAs back layer due to a Fabry-Perot resonance in the air/semiconductor/meta heterostructure.

リンク情報
DOI
https://doi.org/10.1109/PVSC.2008.4922457
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000273995000112&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/PVSC.2008.4922457
  • ISSN : 0160-8371
  • Web of Science ID : WOS:000273995000112

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