2007年9月
A proton pumping gate field-effect transistor for a hydrogen gas sensor
IEEE Sensors Journal
- ,
- ,
- 巻
- 7
- 号
- 9
- 開始ページ
- 1268
- 終了ページ
- 1269
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1109/JSEN.2007.901268
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function. © 2007 IEEE.
- リンク情報
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- DOI
- https://doi.org/10.1109/JSEN.2007.901268
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000249742700007&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34547470401&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34547470401&origin=inward
- ID情報
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- DOI : 10.1109/JSEN.2007.901268
- ISSN : 1530-437X
- eISSN : 1558-1748
- SCOPUS ID : 34547470401
- Web of Science ID : WOS:000249742700007