MISC

2007年9月

A proton pumping gate field-effect transistor for a hydrogen gas sensor

IEEE Sensors Journal
  • Keiji Tsukada
  • ,
  • Tomiharu Yamaguchi
  • ,
  • Toshihiko Kiwa

7
9
開始ページ
1268
終了ページ
1269
記述言語
英語
掲載種別
DOI
10.1109/JSEN.2007.901268
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function. © 2007 IEEE.

リンク情報
DOI
https://doi.org/10.1109/JSEN.2007.901268
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000249742700007&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34547470401&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34547470401&origin=inward
ID情報
  • DOI : 10.1109/JSEN.2007.901268
  • ISSN : 1530-437X
  • eISSN : 1558-1748
  • SCOPUS ID : 34547470401
  • Web of Science ID : WOS:000249742700007

エクスポート
BibTeX RIS