Apr, 2018 - Mar, 2021
Investigation on omeration mecanism of low-voltage organic field-effect transistors and its application to development of sensing device
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)
- Grant number
- 18K05256
- Japan Grant Number (JGN)
- JP18K05256
- Authorship
- Principal investigator
- Grant amount
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- (Total)
- 4,420,000 Japanese Yen
- (Direct funding)
- 3,400,000 Japanese Yen
- (Indirect funding)
- 1,020,000 Japanese Yen
- Grant type
- Other
Through the research to investigate the operation mechanism of the low-voltage Organic thin-film transistors (OTFT), our result suggested the crystallinity of the semiconductor layer is key to the low-voltage operation of the OTFT. On the other hand, the quantitative evaluation of the hetero interface (polymer-small molecule interface, semiconductor layer-insulating layer interface) and carrier traps existing inside the semiconductor layer in the OTFT did not proceed as planned. We will continue to study this point. With regard to investigation on choice of insulator materials, we were able to discover promising materials that would lead to low voltage operation of OTFTs.
Regarding the application of OTFTs to sensing devices, the flexible OTFT based sensors have been successfully fabricated, such as pressure sensors and strain sensors.
Regarding the application of OTFTs to sensing devices, the flexible OTFT based sensors have been successfully fabricated, such as pressure sensors and strain sensors.
- Link information
- ID information
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- Grant number : 18K05256
- Japan Grant Number (JGN) : JP18K05256