2007年1月
Electronic and geometric stabilities of clusters with transition metal encapsulated by silicon
JOURNAL OF PHYSICAL CHEMISTRY A
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- 巻
- 111
- 号
- 1
- 開始ページ
- 42
- 終了ページ
- 49
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/jp066757f
- 出版者・発行元
- AMER CHEMICAL SOC
Silicon clusters mixed with a transition metal atom, MSin, were generated by a double-laser vaporization method, and the electronic and geometric stabilities for the resulting clusters with transition metal encapsulated by silicon were examined experimentally. By means of a systematic doping with transition metal atoms of groups 3, 4, and 5 (M = Sc, Y, Lu, Ti, Zr, Hf, V, Nb, and Ta), followed by changes of charge states, we explored the use of an electronic closing of a silicon caged cluster and variations in its cavity size to facilitate metal-atom encapsulation. Results obtained by mass spectrometry, anion photoelectron spectroscopy, and adsorption reactivity toward H2O show that the neutral cluster doped with a group 4 atom features an electronic and a geometric closing at n = 16. The MSi16 cluster with a group 4 atom undergoes an electronic change in (i) the number of valence electrons when the metal atom is substituted by the neighboring metals with a group 3 or 5 atom and in (ii) atomic radii with the substitution of the same group elements of Zr and Hf. The reactivity of a halogen atom with the MSi16 clusters reveals that VSi16F forms a superatom complex with ionic bonding.
- リンク情報
- ID情報
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- DOI : 10.1021/jp066757f
- ISSN : 1089-5639
- Web of Science ID : WOS:000243229000008