2017年
Comparison of buffer layers on SnS thin-film solar cells prepared by co-evaporation
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 14
- 号
- 6
- 開始ページ
- 1600194-1
- 終了ページ
- 1600194-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1002/pssc.201600194
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
The binary compound SnS consists of elements that are nontoxic, inexpensive, and abundant in the Earth's crust. It is a p-type semiconductor with a band gap energy of 1.3 eV and an absorption coefficient of 10(4) cm(-1), and is therefore a potential candidate for use as a solar cell absorber material. In this study, SLG/Mo/SnS/CdS/ZnO:Al/Al and SLG/Mo/SnS/ZnO/ZnO:Al/Al SnS thin-film solar cells with different buffer layers were fabricated using a co-evaporation method. The dependence of the photovoltaic properties of the SnS thin-film solar cells with CdS or ZnO as the buffer layer was investigated. We demonstrate that the device with a ZnO buffer layer exhibited higher conversion efficiency and short-circuit current density compared to the device with a CdS buffer layer. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- リンク情報
- ID情報
-
- DOI : 10.1002/pssc.201600194
- ISSN : 1862-6351
- Web of Science ID : WOS:000405267800034