MISC

2013年1月

Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • S. Mitsui
  • ,
  • Y. Unno
  • ,
  • Y. Ikegami
  • ,
  • Y. Takubo
  • ,
  • S. Terada
  • ,
  • K. Hara
  • ,
  • Y. Takahashi
  • ,
  • O. Jinnouchi
  • ,
  • R. Nagai
  • ,
  • T. Kishida
  • ,
  • K. Yorita
  • ,
  • K Hanagaki
  • ,
  • R. Takashima
  • ,
  • S. Kamada
  • ,
  • K. Yamamura

699
開始ページ
36
終了ページ
40
DOI
10.1016/j.nima.2012.05.071
出版者・発行元
Elsevier BV

Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×10 16 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance. © 2012 Elsevier B.V.

リンク情報
DOI
https://doi.org/10.1016/j.nima.2012.05.071
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84870472140&origin=inward

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