2013年
Terahertz properties from the surface of strained SiGe on Si multilayered structure
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
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- 記述言語
- 英語
- 掲載種別
- 研究論文（国際会議プロシーディングス）
- 出版者・発行元
- IEEE
A Large-scale integration (LSI) has been improved by scaling contraction. Strained Si has been proposed as a higher carrier mobility than usual. We have evaluated the strained SiGe wafer by LTEM, which is a method of analyzing to detect THz waves generated by fs laser irradiated into the sample.
- リンク情報
- ID情報
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- ISSN : 2162-2027
- Web of Science ID : WOS:000345855300420