We disentangle complex Si(111) hole subbands dispersion obtained by angle-resolved photoelectron spectroscopy and classify the subbands into three valence components. Through this procedure, quantum numbers and in-plane effective masses of the subbands are determined. The in-plane effective masses are close to the effective masses of a Si bulk valence band obtained by the first-principles calculations. Out-of-plane effective masses are obtained within the framework of triangular potential approximation. The results are compared to the reported theoretical results examining the validity of the theory. Energy separations of the subbands, order of the subbands, and out-of-plane effective masses are found to be basically in good agreement with the theoretical results.