With application to underlayer of strained Si film in mind, polycrystalline SiGe films were deposited by plasma chemical vapor deposition (PCVD) using a high-density surface wave-excited plasma in SiH4/GeH4/H2 gas. The atomic ratio of Si/Ge in the film was controlled by adjusting the gas flow rate ratio of SiH4/GeH4. The lattice spacing of the film was also controlled by the gas flow rate ratio. Polycrystalline SiGe film with large grain size of ∼ 200 nm and high crystallinity was successfully deposited by surface wave-excited plasma. © 2007 Elsevier B.V. All rights reserved.