2020年4月
Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film
NANOTECHNOLOGY
- 巻
- 31
- 号
- 14
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/1361-6528/ab62cf
- 出版者・発行元
- IOP PUBLISHING LTD
We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B4C on SiC and graphene on B4C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B4C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B4C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 x 10(13) to 2 x 10(15) cm(-2). Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.
- リンク情報
- ID情報
-
- DOI : 10.1088/1361-6528/ab62cf
- ISSN : 0957-4484
- eISSN : 1361-6528
- Web of Science ID : WOS:000520934100001