2019年1月14日
Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime
Applied Physics Letters
- 巻
- 114
- 号
- 2
- 開始ページ
- 023101-1
- 終了ページ
- 023101-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.5067296
- 出版者・発行元
- {AIP} Publishing
This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its electrostatic potential distribution. The quantized conductance is governed by the dynamics of edge channels passing through or backscattered at the QPC, which is controlled by both the top-gate and back-gate biases. The effects of the split-gate gap width and the filling in the QPC on the edge-channel manipulations are experimentally verified. The experimental results are consistent with the theoretical predictions of open/closed configurations of the edge channels around QPC with different gate gap widths.
- リンク情報
- ID情報
-
- DOI : 10.1063/1.5067296
- ISSN : 0003-6951
- ORCIDのPut Code : 72712227
- SCOPUS ID : 85060082993