2016年6月
Optoelectronic properties of valence-state-controlled amorphous niobium oxide
JOURNAL OF PHYSICS-CONDENSED MATTER
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- 巻
- 28
- 号
- 25
- 開始ページ
- 255001
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/0953-8984/28/25/255001
- 出版者・発行元
- IOP PUBLISHING LTD
In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbOx), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbOx thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbOx films can be controlled from 5+ to 4+ by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbOx films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbOx films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.
- リンク情報
- ID情報
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- DOI : 10.1088/0953-8984/28/25/255001
- ISSN : 0953-8984
- eISSN : 1361-648X
- Web of Science ID : WOS:000376693100008