2015年12月
Stacked Image Sensor Using Chlorine-doped Crystalline Selenium Photoconversion Layer Composed of Size-controlled Polycrystalline Particles
IEE IEDM
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- 巻
- 4
- 号
- 3
- 開始ページ
- 88
- 終了ページ
- 91
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- 出版者・発行元
- IEEE
We demonstrate a stacked complementary metal-oxide semiconductor (CMOS) image sensor overlaid with a chlorine (Cl)-doped crystalline selenium (c-Se) photoconversion layer. The size of the polycrystalline particles (grains) of c-Se, which is strongly related to dark current pattern noise, is controlled by Cl doping to c-Se; hence, the resulting device provides clear images. Furthermore, avalanche multiplication was successfully observed in a Cl-doped c-Se film fabricated on a glass substrate at a relatively low applied voltage.
- リンク情報
- ID情報
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- Web of Science ID : WOS:000380472500198