FURUTA Mamoru

J-GLOBAL         Last updated: Oct 23, 2019 at 01:26
 
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Name
FURUTA Mamoru
Affiliation
Kochi University of Technology
Section
School of Environmental Science and Engineering
ORCID ID
0000-0003-1685-3246

Academic & Professional Experience

 
Aug 2018
   
 
Professor, Environmental Science and Engineering, Kochi University of Technology
 
Jan 2011
 - 
Jul 2018
Professor, Environmental Science and Engineering, Kochi University of Technology
 
Apr 2008
 - 
Dec 2010
Associate Professor, Research Institute, Kochi University of Technology
 
Apr 2005
 - 
Mar 2008
Associate Professor, Research Institute, Kochi University of Technology
 
Apr 2003
 - 
Mar 2005
生産技術センター 主務, Toshiba Matsushita Display Technology Co. Ltd.
 

Education

 
Apr 2002
 - 
Mar 2003
Nara Institute Science and Technology
 
Apr 1986
 - 
Mar 1988
The University of Electro-Communications
 
Apr 1984
 - 
Mar 1986
The University of Electro-Communications
 
Apr 1979
 - 
Mar 1984
Osaka Prefecture University College of Technology
 

Awards & Honors

 
Mar 2018
APEX/JJAP Editorial Contribution Award, 応用物理学会
 
Dec 2016
Low-temperature Processed Self-Alighned InGaZnO Hybrid Thin-Film Transistor with an Organic Gate Insulator, Outstanding Poster Award, International Display Workshops (IDW ’16)
 
Dec 2013
High mobility atmospheric pressure processed IGZO TFT with AlOx/IGZO stack fabricated by mist-CVD, Outstanding Poster Award, International Display Workshops (IDW ’13)
 
Jul 2013
High mobility IGZO TFT fabricated by solution-based non-vacuum mist-CVD, Overall Poster Award, Semiconductor Technology for ULSI and TFTs IV (2013)
 
Dec 2006
Low-Temperature Synthesis of SIO2 Insulator by ICP-CVD using Tetramethylsilane, Outstanding Poster Award, International Display Workshops (IDW ’06)
 

Published Papers

 
Sumio Sugisaki, Tokiyoshi Matsuda, Mutsunori Uenuma, Toshihide Nabatame, Yasuhiko Nakashima, Takahito Imai, Yusaku Magari, Daichi Koretomo, Mamoru Furuta, Mutsumi Kimura
Scientific Reports   9    Dec 2019
© 2019, The Author(s). We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom...
Dapeng Wang, Wenjing Zhao, Mamoru Furuta
Journal of Physics D: Applied Physics   52    Apr 2019
© 2019 IOP Publishing Ltd. The impact of thermal treatment temperature on the density of oxygen-related defects in the lattice of amorphous InGaZnO is investigated. X-ray photoelectron spectroscopy results state that the oxygen-deficient defects ...
C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, T. Noguchi
AIP Advances   9    Apr 2019
© 2019 Author(s). InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO 2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of...
Giang T. Dang, Martin W. Allen, Mamoru Furuta, Toshiyuki Kawaharamura
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. This review summarizes progress in the fabrication of Schottky diodes (SDs), metal-semiconductor and metal-oxide-semiconductor FETs on mist-chemical vapor deposition-(CVD)-grown oxide semiconductor thin...
Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S. G.Mehadi Aman, Ryunosuke Higashi, Shuhei Hamada
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. Heterojunction channel engineering is discussed as a means of enhancing the performance and bias stress stability of In-Ga-Zn-O thin-film transistors (IGZO TFTs). A heterojunction channel was formed by ...
Koretomo Daichi, Hashimoto Yuta, Hamada Shuhei, Miyanaga Miki, Furuta Mamoru
JAPANESE JOURNAL OF APPLIED PHYSICS   58(1)    Jan 2019   [Refereed]
Wang Dapeng, Furuta Mamoru
BEILSTEIN JOURNAL OF NANOTECHNOLOGY   9 2573-2580   Sep 2018   [Refereed]
Jiang Jingxin, Furuta Mamoru
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   18(8) 5668-5673   Aug 2018   [Refereed]
Aman S. G. Mehadi, Furuta Mamoru
JAPANESE JOURNAL OF APPLIED PHYSICS   57(8)    Aug 2018   [Refereed]
Aman S. G. Mehadi, Koretomo Daichi, Magari Yusaku, Furuta Mamoru
IEEE TRANSACTIONS ON ELECTRON DEVICES   65(8) 3257-3263   Aug 2018   [Refereed]

Misc

 
S. G.Mehadi Aman, Daichi Koretomo, Yusaku Magari, Mamoru Furuta
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings      Aug 2018
© 2018 FTFMD. Bottom-gate InGaZnOx thin-film transistor (IGZO TFT) with plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 passivation layer were fabricated and their characteristics were analyzed. Two different gas chemistries, SiH4/N2O/N2 an...
Mamoru Furuta, Yvonne Krieg, Gengo Tatsuoka, S. G.Mehadi Aman, Yuya Hirota, Norbert Frühauf
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016   4 2169-2170   Jan 2018
copyright © 2016 Society of Information Display. All rights reserved. High performance, top-gated, and self-aligned In-Ga-Zn-O thin-film transistor (IGZO TFT) was demonstrated at a maximum process temperature of 150 °C using an organic gate insula...
Susumu Horita, Mamoru Furuta, Reiji Hattori, Yasuaki Ishikawa
Japanese Journal of Applied Physics   55    Mar 2016
Y. Magari, S. Hashimoto, K. Hamada, M. Furuta
ECS Transactions   75 139-144   Jan 2016
© 2016 The Electrochemical Society. In this study, metal-semiconductor field-effect transistor (MES-FET) with an In-Ga-Zn-O/AgOX Schottky gate was fabricated at 200 °C. We investigated the effects of O2 gas flow ratio during the IGZO deposition an...
T. Takagi, H. Seo, T. Sakai, H. Ohtake, M. Furuta
IS and T International Symposium on Electronic Imaging Science and Technology      Jan 2016
© 2016 Society for Imaging Science and Technology. We present a novel single-chip color image sensor with a layered structure of three organic photoconductive films (OPFs), each one sensitive to only one primary color (red, green, or blue). First,...

Conference Activities & Talks

 
Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator [Invited]
FURUTA Mamoru
5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018)   14 Nov 2018   
Low-temperature activation of Ar+O2+H2 sputtered In–Ga–Zn–O film followed by thermal annealing [Invited]
FURUTA Mamoru
7th International Symposium on Transparent on Conductive Materials (TCM2018)   17 Oct 2018   
Low-temperature activation method for InGaZnOx thin-film transistors [Invited]
FURUTA Mamoru
ECS and SMEQ Joint International Meeting   3 Oct 2018   
Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition
FURUTA Mamoru
International Conference on Solid State Devices and Materials (SSDM2018)   12 Sep 2018   
酸化物半導体InGaZnOx薄膜トランジスタの特性制御 [Invited]
FURUTA Mamoru
シリコン材料・デバイス研究会(SDM)   7 Apr 2018