2021年8月6日
Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck
Nature Communications
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- 巻
- 12
- 号
- 1
- 開始ページ
- 4752
- 終了ページ
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1038/s41467-021-25094-5
- 出版者・発行元
- Springer Science and Business Media LLC
<title>Abstract</title>Since the invention of transistors, the flow of electrons has become controllable in solid-state electronics. The flow of energy, however, remains elusive, and energy is readily dissipated to lattice via electron-phonon interactions. Hence, minimizing the energy dissipation has long been sought by eliminating phonon-emission process. Here, we report a different scenario for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss. Direct nanothermometric mapping of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, indicating unexpected thermal isolation between the two subsystems. This surprising effect arises from the overpopulated hot longitudinal-optical (LO) phonons generated through frequent emission by hot electrons, which induce equally frequent LO-phonon reabsorption (“hot-phonon bottleneck”) cancelling the net energy loss. Our work sheds light on energy manipulation in nanoelectronics and power-electronics and provides important hints to energy-harvesting in optoelectronics (such as hot-carrier solar-cells).
- リンク情報
- ID情報
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- DOI : 10.1038/s41467-021-25094-5
- eISSN : 2041-1723