2016年5月9日
Reactive etching by ClF
Jpn. J. Appl. Phys.
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- 巻
- 55
- 号
- 6
- 開始ページ
- 06HB01
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.7567/JJAP.55.06HB01
- 出版者・発行元
- Institute of Physics
A reactive gas cluster injection system with a scanning function was developed in order to increase the processing area. High-precision anisotropic etching with an aspect ratio of 7 was achieved for ClF<inf>3</inf>cluster etching without scanning. However, with scanning, the aspect ratio for etching decreased to 1.5 because the side walls were etched by the gas retained in the trench. By reducing the source gas pressure, increasing the target distance, and mixing He in the source gas, anisotropic etching with an aspect ratio of about 6.3 was achieved with this apparatus.
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.55.06HB01
- ISSN : 0021-4922
- CiNii Articles ID : 150000112604