2021年1月11日
N-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers
Applied Physics Letters
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- 巻
- 118
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0035343
- 出版者・発行元
- AMER INST PHYSICS
In this study, we attempt to identify the presence of surface defects (SDs) at an n-type GaN surface after high-temperature growth and gain insight into their intrinsic features. To this end, first, we carefully investigate n-type GaN samples with different surface etching depths. Low-temperature photoluminescence (PL) spectra reveal that SDs are most likely nitrogen vacancies (VN) and/or VN-related point defects intensively distributed within ∼100 nm from the n-type GaN surface after a high-temperature growth. We investigate the effect of SDs on the internal quantum efficiency (IQE) of green light-emitting diodes (LEDs) by preparing GaInN-based green LEDs employing a surface-etched n-type GaN, which exhibits a prominent enhancement of the PL efficiency with an increase in the etching depth. This effect is attributable to the reduced non-radiative recombination centers in multiple-quantum-well active regions because the SDs near the n-type GaN surface are removed by etching. We discuss strategies of in situ engineering on SDs to further improve the IQE in GaInN-based green LEDs on the basis of the results presented in this study.
- リンク情報
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- DOI
- https://doi.org/10.1063/5.0035343
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000611829800002&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85099382518&origin=inward 本文へのリンクあり
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85099382518&origin=inward
- ID情報
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- DOI : 10.1063/5.0035343
- ISSN : 0003-6951
- eISSN : 1077-3118
- SCOPUS ID : 85099382518
- Web of Science ID : WOS:000611829800002