論文

2000年10月

Preparation of boron and boron phosphide films by photo- and thermal chemical vapor deposition processes

JOURNAL OF SOLID STATE CHEMISTRY
  • Y Kumashiro
  • ,
  • K Sato
  • ,
  • S Chiba
  • ,
  • S Yamada
  • ,
  • D Tanaka
  • ,
  • K Hyodo
  • ,
  • T Yokoyama
  • ,
  • K Hirata

154
1
開始ページ
39
終了ページ
44
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1006/jssc.2000.8808
出版者・発行元
ACADEMIC PRESS INC

We have calculated first excitation energies, oscillator strengths, and potential energy surfaces of B2H6 and PH3 by using an ab initio molecular orbital method to confirm that the deuterium lamp is effective for the excitation of both B2H6 and PH, in the photo-chemical vapor deposition (photo-CVD) process. The deuterium lamp is useful for growing the film at 600-1000 degreesC in the B2H6-PH3-H-2 system. The activation energies for film growth for thermal CVD decrease by using the deuterium lamp. Boron phosphide film grew epitaxially on Si(100) plane with a deuterium lamp at lower temperature than by thermal CVD at 100 degreesC, The electrical properties of boron and boron phosphide films on silica glass were improved by deuterium, (C) 2000 Academic Press.

リンク情報
DOI
https://doi.org/10.1006/jssc.2000.8808
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000165197700009&DestApp=WOS_CPL
ID情報
  • DOI : 10.1006/jssc.2000.8808
  • ISSN : 0022-4596
  • Web of Science ID : WOS:000165197700009

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