1997年6月
Ab initio molecular-orbital study on the surface reactions of methane and silane plasma chemical vapor deposition
PHYSICAL REVIEW B
- ,
- ,
- 巻
- 55
- 号
- 23
- 開始ページ
- 15467
- 終了ページ
- 15470
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- 出版者・発行元
- AMERICAN PHYSICAL SOC
Hydrogen-elimination reactions on the substrate surface of methane plasma are studied on the basis of an ab initio molecular-orbital method. The activation energy of the reaction of the rate determining step (by MP2/3-21G//HF/3-21G) is much higher than the analogous reaction in silane plasma. In the case of carbon surface reactions, the activation energy becomes larger; as the model cluster size becomes larger, while in the case of silicon surface reactions,the activation energy becomes lower as the model cluster size becomes larger. Thermodynamically, the relative stability of the reactant and the product of the hydrogen elimination reaction on the substrate surface of methane plasma are similar to that of silane plasma. Thus the methane plasma surface reactions are expected to be qualitatively different from silane plasma surface reactions at low substrate temperatures, while they are expected to be similar at high substrate temperatures.
- リンク情報
- ID情報
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- ISSN : 0163-1829
- Web of Science ID : WOS:A1997XH33500034