2013年7月
Catalyst-free growth of amorphous silicon nanowires by laser ablation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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- 巻
- 112
- 号
- 1
- 開始ページ
- 1
- 終了ページ
- 7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1007/s00339-012-7169-y
- 出版者・発行元
- SPRINGER
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperature continuous wave laser ablation of Si in high-pressure (0.1-0.9 MPa) Ar gas without the addition of any catalysts. The diameter and length of the NWs increased as the pressures of the ambient Ar increased. Sphere-like Si particles with diameters of 4-110 nm were observed at the tips of grown NWs and their diameters exhibited a strong correlation with the NW diameters. We propose a stress-driven self-catalytic vapor-liquid-solid mechanism to explain the growth of the NWs.
- リンク情報
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- DOI
- https://doi.org/10.1007/s00339-012-7169-y
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000320274100001&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?eid=2-s2.0-84878922530&partnerID=MN8TOARS
- URL
- http://orcid.org/0000-0003-2484-9036
- ID情報
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- DOI : 10.1007/s00339-012-7169-y
- ISSN : 0947-8396
- ORCIDのPut Code : 43491074
- SCOPUS ID : 84878922530
- Web of Science ID : WOS:000320274100001