Akinobu Teramoto - My portal

Profile Information

Affiliation: 教授, ナノデバイス・バイオ融合科学研究所, 広島大学
: 客員教授, 未来科学技術共同研究センター, 東北大学

Degree: Ph. D.(Tohoku University)
修士(工学）(東北大学)
学士(工学)(東北大学)

J-GLOBAL ID: 200901066811423466
researchmap Member ID: 5000041889

External link: http://db.tohoku.ac.jp/whois/e_detail/1ec59f4a457a70c4acac497220c05f5b.html

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Research History

Jun, 2019 - Present

Visiting Professor, New Industry Creation Hatchery Center, Tohoku University
Jun, 2019 - Present

Professor, Research Institute for Nanodevice and Bio Systems, Hiroshima University
Jul, 2014 - May, 2019

Professor, New Industry Creation Hatchery Center, Tohoku University
Apr, 2007 - Jun, 2014

Associate professor, New Industry Creation Hatchery Center, Tohoku University
Apr, 2002 - Mar, 2007

Associate Professor, New Industry Hatchery Center, Tohoku University,
Apr, 1992 - Feb, 2002

MItsubishi Ekectric Corporation

Education

Oct, 2000 - Sep, 2001

Electronic engineering, Graduate School, Division of Engineering, Tohoku University
Apr, 1990 - Mar, 1992

Electronic Engineering, Graduate School of Engineering, Tohoku University
Apr, 1986 - Mar, 1990

Electronic engineering, Faculty of Engineering, Tohoku University

Committee Memberships

Nov, 2018 - Present

Program Committee, 2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY
Apr, 2016 - Present

実行・プログラム委員, 電子デバイス界面テクノロジー研究会
Jul, 2019 - Mar, 2020

幹事, 応用物理学会中国四国支部
Jul, 2019 - Dec, 2019

先進パワー半導体分科会第6回講演会実行委員, 応用物理学会先進パワー半導体分科会
Jul, 2004 - Mar, 2015

実行・プログラム委員, 応用物理学会ゲートスタック研究会
Apr, 2003 - Mar, 2009

シリコン材料・デバイス研究会専門委員, 電子通信情報学会
Apr, 2003 - Mar, 2005

運営委員, 日本学術振興会結晶加工と評価技術第145委員会

Awards

Sep, 2014

Outstanding Paper Award, Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species, The Japan Society of Applied Physics

Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori
Oct, 2008

日本真空協会第33回熊谷記念真空科学論文賞, X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film, 日本真空協会

K. Kawase, H. Umeda, M. Inoue, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi

Papers

390

Effect of charge-up of surfaces of sintered Y₂O₃ and yttrium oxyfluoride on their erosion rates due to ion bombardment

Tetsuya Goto, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, Shigetoshi Sugawa

Journal of Vacuum Science & Technology B, 40(6) 062205-062205, Dec, 2022
Adsorption and surface reaction of isopropyl alcohol on SiO2 surfaces

Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai …

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 40(5), Sep, 2022
A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Japanese Journal of Applied Physics, 60(8) 086501-086501, Aug 1, 2021
Impact on the Conductance Method of the Asymmetry in the AC Response Induced by Interface Trap Levels

Hsin Jyun Lin, Hiroshi Watanabe, Akinobu Teramoto, Rihito Kuroda, Kota Umezawa, Kiichi Furukawa, Shigetoshi Sugawa

ECS Journal of Solid State Science and Technology, 10(4), Apr, 2021
Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes

Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai …

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39(1), Jan 1, 2021
Influence of silicon wafer surface roughness on semiconductor device characteristics

Keiichiro Mori, Shuichi Samata, Noritomo Mitsugi, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa

JAPANESE JOURNAL OF APPLIED PHYSICS, 59, Jul, 2020
Influence of silicon wafer surface roughness on semiconductor device characteristics

Keiichiro Mori, Shuichi Samata, Noritomo Mitsugi, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa

Japanese Journal of Applied Physics, 59, Jul 1, 2020
Plasma resistance of sintered and ion-plated yttrium oxyfluorides with various Y, O, and F composition ratios for use in plasma process chamber

Tetsuya Goto, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, Shigetoshi Sugawa

Journal of Vacuum Science & Technology A, 38 043003-1-043003-9, Jun 11, 2020 Peer-reviewed
Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 33(2) 232-239, May, 2020
Resistance Measurement Platform for Statistical Analysis of Emerging Memory Materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

IEEE Transactions on Semiconductor Manufacturing, 33(2) 232-239, May, 2020
Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition

Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa

Journal of Vacuum Science & Technology A, 38 032408, Apr 6, 2020 Peer-reviewed
Study on influence of O<inf>2</inf> concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors

Tomoyuki Suwa, Akinobu Teramoto, Yasuyuki Shirai, Takenobu Matsuo, Nobutaka Mizutani, Shigetoshi Sugawa

ECS Transactions, 97(3) 23-29, Apr, 2020
A high-precision 1 Omega-10 M Omega range resistance measurement platform for statistical evaluation of emerging memory materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

JAPANESE JOURNAL OF APPLIED PHYSICS, 59, Apr, 2020
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes

R. Akimoto, R. Kuroda, A. Teramoto, T. Mawaki, S. Ichino, T. Suwa, S. Sugawa

IEEE International Reliability Physics Symposium Proceedings, 2020-April, Apr, 2020
A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Japanese Journal of Applied Physics, 59(SG), Apr, 2020
Low-Temperature Deposition of Silicon Nitride Films Using Ultraviolet-Irradiated Ammonia

Yoshinobu Shiba, Akinobu Teramoto, Tomoyuki Suwa, Katsutoshi Ishii, Akira Shimizu, Kota Umezawa, Rihito Kuroda, Shigetoshi Sugawa

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 8(11) P715-P718, Nov, 2019
High Reliability CoFeB/MgO/CoFeB Magnetic Tunnel Junction Fabrication Using Low-damage Ion Beam Etching

Hyeonwoo Park, Akinobu Teramoto, Jun-ichi Tsuchimoto, Keiichi Hashimoto, Tomoyuki Suwa, Marie Hayashi, Rihito Kuroda, Shigetoshi Sugawa

2019 International Conference on Solid State Devices and Materials, 401-402, Sep, 2019 Peer-reviewed
Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction

H. Park, A. Teramoto, J.-I. Tsuchimoto, M. Hayashi, K. Hashimoto, S. Sugawa

Japanese Journal of Applied Physics, 58 SIIB29_1-SIIB29_6, Jul, 2019 Peer-reviewed
SiNx Deposition at Low Temperature Using UV-Irradiated NH3

Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa

ECS Transactions, 89(4) 31-36, Apr, 2019 Peer-reviewed
Low-temperature deposition of silicon nitride films using ultraviolet-irradiated ammonia

Yoshinobu Shiba, Akinobu Teramoto, Tomoyuki Suwa, Katsutoshi Ishii, Akira Shimizu, Kota Umezawa, Rihito Kuroda, Shigetoshi Sugawa

ECS Journal of Solid State Science and Technology, 8(11) P715-P718, 2019

Misc.

Modification of states of copper and copper oxide due to IPA treatment

間脇武蔵, 寺本章伸, 石井勝利, 志波良信, 諏訪智之, 東雲秀司, 清水亮, 梅澤好太, 黒田理人, 白井泰雪 …

電子情報通信学会技術研究報告(Web), 121(71(SDM2021 22-29)), 2021
Operation Principle and Structure of Normally-off Floating Gate GaN HEMT with Injection Gate

119(408) 55-58, Jan 31, 2020
Operation Principle and Structure of Normally-off Floating Gate GaN HEMT with Injection Gate

119(409) 55-58, Jan 31, 2020
Large-Scale Evaluation of MIM Devices Using High-Precision Current Measurement Array Test Circuit

鈴木勇人, PARK Hyeonwoo, 寺本章伸, 寺本章伸, 黒田理人, 黒田理人, 諏訪智之, 須川成利, 須川成利

応用物理学会春季学術講演会講演予稿集(CD-ROM), 67th, 2020
Analysis of Effect of Drain-to-Source Voltage on Random Telegraph Noise by Statistical Measurement

秋元瞭, 黒田理人, 黒田理人, 寺本章伸, 寺本章伸, 間脇武蔵, 市野真也, 諏訪智之, 須川成利

電子情報通信学会技術研究報告(Web), 120(205(SDM2020 14-21)), 2020
Modification of states of copper and copper oxide due to IPA treatment

間脇武蔵, 寺本章伸, 石井勝利, 志波良信, 諏訪智之, 東雲秀司, 清水亮, 梅澤好太, 黒田理人, 白井泰雪 …

電子情報通信学会技術研究報告(Web), 120(205(SDM2020 14-21)), 2020
Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy

119(239) 59-64, Oct 23, 2019
Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor

119(239) 65-68, Oct 23, 2019
Measurement of gas concentration distribution in vacuum chamber using high SN ratio absorption imaging

高橋圭吾, DA SILVA Yhang Ricardo Sipauba, 沼尾直毅, 黒田理人, 藤原康行, 村田真麻, 石井秀和, 森本達郎, 森本達郎, 諏訪智之 …

映像情報メディア学会技術報告, 43(18(IST2019 35-39)) 11‐14-14, Jun 11, 2019
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain

市野真也, 寺本章伸, 黒田理人, 間脇武蔵, 諏訪智之, 須川成利, 須川成利

電子情報通信学会技術研究報告, 118(241(SDM2018 52-63)) 51‐56, Oct 10, 2018
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and Its Decrease by Atomically Flattening Process (シリコン材料・デバイス)

朴賢雨, 黒田理人, 後藤哲也, 諏訪智之, 寺本章伸, 木本大幾, 須川成利

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 117(260) 9-14, Oct 25, 2017
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit

市野真也, 間脇武蔵, 寺本章伸, 黒田理人, 若嶋駿一, 須川成利, 須川成利

電子情報通信学会技術研究報告, 117(260(SDM2017 50-60)) 57‐62, Oct 18, 2017
Statistical analysis of random telegraph noise in pixel source follower~Impacts of transistor shape, time constants and number of states~

黒田理人, 寺本章伸, 市野真也, 間脇武蔵, 若嶋駿一, 須川成利

映像情報メディア学会技術報告, 41(32(IST2017 49-59)) 13‐16-16, Sep 18, 2017
Behavior of Random Telegraph Noise toward Bias Voltage Changing

間脇武蔵, 寺本章伸, 黒田理人, 市野真也, 後藤哲也, 諏訪智之, 須川成利, 須川成利

電子情報通信学会技術研究報告, 116(270(SDM2016 69-78)) 35‐38, Oct 19, 2016
Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition

齋藤雅也, 諏訪智之, 寺本章伸, 黒田理人, 幸田安真, 杉田久哉, 林真里恵, 土本淳一, 石井秀和, 志波良信 …

電子情報通信学会技術研究報告, 116(270(SDM2016 69-78)) 27‐30, Oct 19, 2016
Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas

小尻尚志, 小尻尚志, 諏訪智之, 橋本圭市, 寺本章伸, 黒田理人, 須川成利, 須川成利

電子情報通信学会技術研究報告, 115(362(EID2015 9-24)) 1‐4, Dec 7, 2015
Xe/H₂プラズマを用いたシリコン基板表面の低温平坦化技術 (シリコン材料・デバイス)

諏訪智之, 寺本章伸, 後藤哲也

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 115(280) 13-16, Oct 29, 2015
酸素ラジカル処理を用いた強誘電体BiFeO₃薄膜の形成技術 (シリコン材料・デバイス)

今泉文伸, 後藤哲也, 寺本章伸

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 115(280) 41-44, Oct 29, 2015
A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET

古川貴一, 寺本章伸, 黒田理人, 諏訪智之, 橋本圭市, 小尻尚志, 須川成利, 須川成利

電子情報通信学会技術研究報告, 115(280(SDM2015 71-83)) 35-40, Oct 22, 2015
Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller

杉田久哉, 幸田安真, 諏訪智之, 黒田理人, 後藤哲也, 石井秀和, 山下哲, 寺本章伸, 須川成利, 須川成利 …

電子情報通信学会技術研究報告, 115(280(SDM2015 71-83)) 63-68, Oct 22, 2015

Books and Other Publications

Different Types of Field-Effect Transistors - Theory and Applications

P. Gaubert, A. Teramoto (Role: Contributor, Chapter 1)

InTech, Jun, 2017
dvances in Noise Analysis, Mitigation and Control

P. Gaubert, A. Teramoto (Role: Contributor, Chapter 1)

InTech, Oct, 2016
Advanced Gate Stacks for High-Mobility Semiconductors

A. Teramoto, T. Ohmi (Role: Joint author, 21-24頁)

Springer, Jul, 2007
Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing

H. Morita, A. Teramoto, H. Morinaga, S. Ojima, K. Mitsumori, T. Yabune, M. Miyashita, H. Kikuyama, J. takano (Role: Joint author, 61-250)

Taylor & Francis, 2006
-

Akinobu Teramoto, Tadahiro Ohmi (Role: Joint author, 489-497)

Fuji Techno System, Mar, 2005 (ISBN: 4938555956)

Presentations

367

SiNx Deposition at Low Temperature Using UV-Irradiated NH3

Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa

235th ECS Meeting, May 26, 2019
Impact of Y-O-F Composition in Yttrium Oxyfluoride on Corrosion Resistance to Plasma Irradiation

A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, S. Sugawa

5th Annual World Congress of Smart Materials, Mar 6, 2019 Invited
An Electrical Impedance Biosensor Array for Tracking Moving Cells

N. Ogata, A. Shina, T. Komiya, Y. Iizuka, K. Matsuse, F. Imaizumi, T. Suwa, A. Teramoto

IEEE SENSORS, Oct 28, 2018
Corrosion Resistance to F and Cl plasma of Yttrium Oxyfluoride (YOF) formed by Sintering

A. Teramoto, Y. Shiba, T. Goto, Y. Kishi, S. Sugawa

AVS 65th International Symposium, Oct 21, 2018
Effects of Process Gases and Gate TiN Electrode during the Post Deposition Anneal to ALD-Al2O3 Dielectric Film

M. Saito, A. Teramoto, T. Suwa, K. Nagumo, Y. Shiba, R. Kuroda, S. Sugawa

VS 65th International Symposium, Oct 21, 2018
Impact of CoFeB Surface Roughness on Reliability of MgO Films in CoFeB/MgO/CoFeB Magnetic Tunnel Junction

H. W. Park, A. Teramoto, J. Tsuchimoto, M. Hayashi, K. Hashimoto, S. Sugawa

4th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures & 26th International Colloquium on Scanning Probe Microscopy, Oct 21, 2018
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain

Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa

IEICE Technical Committee on Silicon Device and Materials, Oct 17, 2018
Impacts of Boron Concentration and Annealing Temperature on Electrical Characteristics of CoFeB/MgO/CoFeB Magnetic Tunnel Junction

H. Park, A. Teramoto, J.-i. Tsuchimoto, M. Hayashi, K. Hashimoto, R. Kuroda, S. Sugawa

International Conference on Solid State Devices and Materials, Sep 9, 2018
Improved Conductance Method for Interface Trap Density of ZrO2-Si interface

H. J. Lin, A. Teramoto, H. Watanabe, R. Kurota, K. Umezawa, K. Furukawa, S. Sugawa

International Conference on Solid State Devices and Materials, Sep 9, 2018
Impact of atomically flat SiO2/Si interface on improvement of MOS device performance

A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa

European Advanced Materials Congress, Aug 21, 2018 Invited
Reliability of MgO in Magnetic Tunnel Junctions Formed by MgO Sputtering and Mg Oxidation

A. Teramoto, K. Hashimoto, T. Suwa, J.-i. Tsuchimoto, M. Hayashi, H. Park, S. Sugawa

IEEE International Reliability Physics Symposium, Mar 11, 2018
Corrosion Resistance of Yttrium Trifluoride (YF3) and Yttrium Oxyfluoride (YOF) used in Plasma Process Chamber

Y. Shiba, A. Teramoto, T. Goto, Y. Kishi

AVS 64th International Symposium, Oct 29, 2017
Difference of the Hysteresis in Capacitance-voltage Characteristics of ALD-Al2O3 MIS Capacitors on Si and GaN Substrate

M. Saito, T. Suwa, A. Teramoto, T. Narita, T. Kachi

AVS 64th International Symposium, Oct 29, 2017
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit

Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa

IEICE Technical Committee on Silicon Device and Materials, Oct 26, 2017
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process

Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa

IEICE Technical Committee on Silicon Device and Materials, Oct 25, 2017
Statistical analysis of random telegraph noise in pixel source follower -- Impacts of transistor shape, time constants and number of states --

Rihito Kuroda, Akinobu Teramoto, Shinya Ichino, Takezo Mawaki, Shunichi Wakashima, Shigetoshi Sugawa

The Institute of Image Information and Television Engineers, Sep 25, 2017
Monte-Carlo Simulation of Biomolecules' Fluid-Dynamics in Electrolyte Facing Nanowires Biosensor

C.-A. Lee, A. Teramoto, H. Watanabe

17th IEEE International Conference on Nanotechnology, Jul 25, 2017
Atomically flat interface for noise reduction in SOIMOSFETs

P. Gaubert, A. Kircher, H. Park, R. Kuroda, S. Sugawa, T. Goto, T. Suwa, A. Teramoto

24th International Conference on Noise and Fluctuations, Jun 20, 2017
Improvement in Electrical Characteristics of ALD Al2O3 Film by Microwave Excited Ar/O2 Plasma Treatment

M. Saito, T. Suwa, A. Teramoto, Y. Koda, R. Kuroda, Y. Shiba, S. Sugawa, J. Tsuchimoto, M. Hayashi

231st ECS Meeting, Apr 15, 2017
Impact of SiO2/Si interface micro-roughness on SILC distribution and dielectric breakdown: A comparative study with atomically flattened devices

H. Park, T. Goto, R. Kuroda, A. Teramoto, T. Suwa, D. Kimoto, S. Sugawa

IEEE International Reliability Physics Symposium, Apr 2, 2017

Professional Memberships

Research Projects

超微細半導体用革新的ウェットプロセス・装置技術の開発

ＮＥＤＯ先導研究プログラム／エネルギー・環境新技術先導研究プログラム, 新エネルギー・産業技術総合開発機構, Jun, 2018 - Jun, 2019

寺本章伸
信頼性、再現性の高い酸化膜形成技術開発とその手法を基礎とした閾値変動のないノーマリオフゲート構造の形成方法の構築

省エネルギー社会の実現に資する次世代半導体研究開発, 文部科学省, Apr, 2016

加地徹
超高性能半導体集積回路製造技術の研究開発

第2次DIINプロジェクト「21 世紀型顧客ニーズ瞬時製品化対応新生産方式の創出」, 国際科学振興財団, Apr, 2008 - Mar, 2013

大見忠弘
超高感度・高分解能界面分析によるゲート絶縁膜／シリコン酸化膜の界面構造の決定

科学研究費補助金（基盤研究（B））, 文部科学省, Apr, 2007 - Mar, 2009

服部健雄
超高速・超低消費電力バランスドフルCMOSシステムLSIの研究

科学研究費補助金(特別推進研究), 文部科学省, Apr, 2006 - Mar, 2009

大見忠弘
ナノ多孔質粒子分散低誘電率基板とダメージフリー実装技術による超高性能半導体実装

課題設定型産業技術開発費助成事業, 新エネルギー・産業技術総合開発機構, Oct, 2005 - Sep, 2008

寺本章伸
超高性能半導体集積回路製造技術の研究開発

DIINプロジェクト「21 世紀型顧客ニーズ瞬時製品化対応新生産方式の創出」, 国際科学振興財団, Apr, 2002 - Mar, 2007

大見忠弘
マイクロ波プラズマCVDによる薄膜シリコン太陽電池製造技術の開発

NEDO・革新的次世代太陽光発電システム技術研究開発, 新エネルギー・産業技術総合開発機構, Oct, 2004 - Mar, 2006

津守利郎
低消費電力バックライトの開発と省エネ製造技術の実証研究

NEDO・エネルギー使用合理化技術実証研究, 新エネルギー・産業技術総合開発機構, Apr, 2004 - Mar, 2006

大見忠弘
マイクロ波励起高密度プラズマ技術を用いた省エネ型半導体製造装置の技術開発

次世代半導体デバイスプロセス等基板技術プログラム, 経済産業省、新エネルギー・産業技術総合開発機構, Apr, 2002 - Mar, 2006

大見忠弘
マイクロ波プラズマ高品質ゲート絶縁膜を用いた超高耐圧SiC電力用トランジスタ

科学研究費補助金(基盤研究（B）(2)), 日本学術振興会, Apr, 2003 - Mar, 2004

寺本章伸

Industrial Property Rights

157

特許6487288 電界効果トランジスタおよびその駆動方法

寺本章伸, 諏訪智之, 黒田理人, 古川貴一
特許6449290 化合物半導体を洗浄する方法、化合物半導体の洗浄用の溶液、化合物半導体デバイスを作製する方法、窒化ガリウム基板を作製する方法、窒化ガリウム基板

長尾兼次, 中村健一, 寺本章伸
特許6440246 半導体素子の形成方法

後藤哲也, 寺本章伸, 黒田理人, 諏訪智之
US9875899 Semiconductor transistor

Hiroshi Kambayashi, Katsunori Ueno, Takehiko Nomura, Yushiro Sato, Akinobu Teramoto, Tadahiro Ohmi
US10043654 Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate

Kenji Nagao, Kenichi Nakamura, Akinobu Teramoto
特許6085178 ＭＩＳ構造トランジスタ,及びＭＩＳ構造トランジスタを作製する方法

渡邊整, 辻幸洋, 寺本章伸
特許6093190 ＭＩＳ構造トランジスタ、及びＭＩＳ構造トランジスタを作製する方法

渡邊整, 辻幸洋, 寺本章伸
US9543191 Wiring structure having interlayer insulating film and wiring line without a barrier layer between

Takenao Nemoto, Takehisa Saito, Yugo Tomita, Hirokazu Matsumoto, Akihide Shirotani, Akinobu Teramoto Xun Gu
特許6033723 化合物半導体を評価する方法

辻幸洋, 寺本章伸
特許5947233 電界効果トランジスタ

神林宏, 寺本章伸, 大見忠弘
特許 5961076 対象物の表面を評価する方法

辻幸洋, 寺本章伸
特許5930416 配線構造体、配線構造体を備えた半導体装置及びその半導体装置の製造方法

須川成利, 寺本章伸, 黒田理人, 谷クン
US9299844 Accumulation-mode MOSFET and driving method thereof

Akinobu Teramoto
US9230799 Method for fabricating semiconductor device and the semiconductor device

Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hsebe, Tadahiro Ohmi
特許5839804 半導体装置の製造方法,および半導体装置

寺本章伸, 上田博一, 両角友一朗, 原田豪繁, 長谷部一秀, 大見忠弘
特許5841726 窒化ガリウム系半導体装置の製造方法

神林宏, 寺本章伸, 大見忠弘
US9157681 Surface treatment method for atomically flattening a silicon wafer and heat treatment apparatus

Tadahiro Ohmi, Akinobu Teramoto, Tomoyuki Suwa
US9153658 Semiconductor device and method of manufacturing the same

Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa
特許5316962 半導体装置

大見忠弘, 寺本章伸, 黒田理人
特許5769160 コンタクト形成方法,半導体装置の製造方法,および半導体装置

大見忠弘, 寺本章伸, 磯貝達典, 田中宏明