Hiroki Koike

Profile Information

Affiliation: Associate professor, Center for Innovative Integrated Electronic Systems Research and Development Division, Tohoku University

Degree: Doctor of Information Engineering(Mar, 2006, Kyushu Institute of Technology)

J-GLOBAL ID: 201101098924141987
researchmap Member ID: 6000029618

External link: http://db.tohoku.ac.jp/whois/e_detail/5e81aff24235e813b17f05c8877121be.html

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Papers

40 nm 1T-1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Toru Yoshiduka, Yitao Ma, Hiroaki Honjo, Koichi Nishioka …

IEEE TRANSACTIONS ON MAGNETICS, 57(3), Mar, 2021
Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice

Hiroki KOIKE, Takaho TANIGAWA, Toshinari WATANABE, Takashi NASUNO, Yasuo NOGUCHI, Mitsuo YASUHIRA, Toru YOSHIDUKA, Yitao MA, Hiroaki HONJO, Koichi NISHIOKA …

2020 IEEE 31st Magnetic Recording Conference (TMRC), Aug 17, 2020
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400℃ thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka …

International Electron Device Meeting, 2019-December, Dec, 2019 Peer-reviewed
12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi …

Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2019-February 202-204, Mar 6, 2019
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications.

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi …

J. Solid-State Circuits, 54(11) 2991-3004, 2019 Peer-reviewed
A Fully Nonvolatile Microcontroller Unit with Embedded STT-MRAM and FPGA-Based Accelerator for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology

M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo, H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi …

IEEE Journal of Solid State Circuits, 54(11) 2991-3004, 2019 Peer-reviewed
14ns write speed 128Mb density Embedded STT-MRAM with endurance>10^10 and 10yrs retention @85°C using novel low damage MTJ integration process

H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa …

International Electron Devise Meeting, 2018-December 27.2.1-27.2.4, Dec, 2018 Peer-reviewed
1T-1MTJ Type Embedded STT-MRAM with Advanced Low-Damage and Short-Failure-Free RIE Technology down to 32 nmφ MTJ Patterning

Hideo Sato, Toshinari Watanabe, Hiroki Koike, Takashi Saito, Sadahiko Miura, Hiroaki Honjo, Hirofumi Inoue, Shoji Ikeda, Yasuo Noguchi, Takaho Tanigawa …

2018 IEEE International Memory Workshop (IMW), 1-4, May, 2018 Peer-reviewed
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer

H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa …

IEEE TRANSACTIONS ON MAGNETICS, 53(11), Nov, 2017 Peer-reviewed
Origin of variation of shift field via annealing at 400 degrees C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

H. Honjo, S. Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike …

AIP ADVANCES, 7(5), May, 2017 Peer-reviewed
Beyond MRAM: Nonvolatile Logic-in-Memory VLSI

Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno

Introduction to Magnetic Random-Access Memory, 199-229, Nov 26, 2016 Peer-reviewed
Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Takahiro Hanyu, Tetsuo Endoh, Daisuke Suzuki, Hiroki Koike, Yitao Ma, Naoya Onizawa, Masanori Natsui, Shoji Ikeda, Hideo Ohno

PROCEEDINGS OF THE IEEE, 104(10) 1844-1863, Oct, 2016 Peer-reviewedInvited
Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design

M. Natsui, A. Tamakoshi, A. Mochizuki, H. Koike, H. Ohno, T. Endoh, T. Hanyu

Proceedings - IEEE International Symposium on Circuits and Systems, 2016- 1878-1881, Jul 29, 2016 Peer-reviewed
Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition

H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa …

IEEE TRANSACTIONS ON MAGNETICS, 52(7), Jul, 2016 Peer-reviewed
An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 6(2) 109-119, Jun, 2016 Peer-reviewedInvited
Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism

H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa …

13th Joint MMM-Intermag Conference, FB-06, Jan 14, 2016 Peer-reviewed
Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip

Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Toshinari Watanabe, Hideo Sato, Soshi Sato, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Takaho Tanigawa …

2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2016 Peer-reviewed
10 nm perpendicular anisotropy CoFeB-MgO magnetic tunnel junction with over 400oC high thermal tolerance by boron diffusion control

H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa …

2015 Symposia on VLSI technology, 2015-August T160-T161, Jun 18, 2015 Peer-reviewed
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa …

2015 IEEE International Memory Workshop, 1-4, May 17, 2015 Peer-reviewed
Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom

S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh, H. Ohno

Japanese Journal of Applied Physics, 54(4) 04DM06-1-04DM06-4, Mar 11, 2015 Peer-reviewed

Misc.

A demonstration of high-performance STT-MRAM by development of unit process and integration process

H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa …

ICD, Apr 23, 2019
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator

小池洋紀, 三浦貞彦, 本庄弘明, 渡辺俊成, 佐藤英夫, 佐藤創志, 那須野孝, 野口靖夫, 安平光雄, 谷川高穂 …

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116(3) 51-56, Apr 14, 2016
CT-1-3 Recent Trends for Magnetic Random Access Memory Technologies

Koike Hiroki, Ohsawa Takashi, Ikeda Shoji, Hanyu Takahiro, Ohno Hideo, Endoh Tetsuo

Proceedings of the Society Conference of IEICE, 2014(2) "SS-6"-"SS-9", Sep 9, 2014
Novel Memory Trend with Three-Dimensional Structured Cell and Spintronics Technology

77 35-40, Jul 11, 2013
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Gained Power Gating Technique : Achieves 1.0ns/200ps Wake-Up/Power-Off Times

ENDOH Tetsuo, OHSAWA Takashi, KOIKE Hiroki, MIURA Sadahiko, HONJO Hiroaki, TOKUTOME Keiichi, IKEDA Shoji, HANYU Takahiro, OHNO Hideo

Technical report of IEICE. ICD, 113(1) 27-32, Apr 11, 2013
Recent Trends for Spin-transfer Torque Magnetic Memories, which Break through the Limitation of Silicon Nonvolatile Technology

ENDOH Tetsuo, OHSAWA Takashi, KOIKE Hiroki, HANYU Takahiro, KASAI Naoki, OHNO Hideo

The Journal of the Institute of Electronics, Information, and Communication Engineers, 95(11) 986-991, Nov 1, 2012

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